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home > Reliability of high-k / metal gate field-effect transistors considering circuit operational constraints formatIsbn:Softcover - 9783741208690 and SUSY GUT phenomenology van Oystaeyen > Reliability of high-k / metal gate field-effect transistors considering circuit operational constraints formatIsbn:Softcover - 9783741208690 and SUSY GUT phenomenology van Oystaeyen
Reliability of high-k / metal gate field-effect transistors considering circuit operational constraints formatIsbn:Softcover - 9783741208690 and SUSY GUT phenomenology van Oystaeyen
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Reliability of high-k / metal gate field-effect transistors considering circuit operational constraints formatIsbn:Softcover - 9783741208690 and SUSY GUT phenomenology van Oystaeyen
Reliability of high-k / metal gate field-effect transistors considering circuit operational constraints formatIsbn:Softcover - 9783741208690 and SUSY GUT phenomenology van Oystaeyen
Reliability of high-k / metal gate field-effect transistors considering circuit operational constraints formatIsbn:Softcover - 9783741208690 and SUSY GUT phenomenology van Oystaeyen
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Reliability of high k metal gate field effect transistors considering circuit operational constraints formatIsbn:Softcover 9783741208690 and SUSY GUT phenomenology van Oystaeyen and SUSY GUT phenomenology Analytic expressions for transmission and reflection coefficients are presented The influence of the off state bias on the dielectric breakdown was studied and compared to the standard assessment methods The oxygen vacancies reside in different charge states depending on applied stress voltages
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Reliability of high-k / metal gate field-effect transistors considering circuit operational constraints formatIsbn:Softcover - 9783741208690 and SUSY GUT phenomenology van Oystaeyen

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